rev.1.00 dec 16, 2005 page 1 of 4 RKP203KN silicon epitaxial trench pin diode for antenna switching rej03g1304-0100 rev.100 dec 16, 2005 features ? adopting the trench structure improves low capacitance. (c = 0.31 pf max) ? low forward resistance. (rf = 1.5 ? max) ? low operation current. ? ultra small leadless package (0805type; the use of an undersurface electrode structure) for use in compact and products. ordering information type no. laser mark package name package code (previous code) RKP203KN 6 mp8 pxsn0002za-a pin arrangement cathode mark mark 1 2 1. cathode 2. anode 6
RKP203KN rev.1.00 dec 16, 2005 page 2 of 4 absolute maximum ratings (ta = 25 c) item symbol value unit reverse voltage v r 30 v forward current i f 100 ma power dissipation pd 100 mw junction temperature tj 125 c storage temperature tstg ? 55 to +125 c electrical characteristics (ta = 25 c) item symbol min typ max unit test condition reverse current i r ? ? 100 na v r = 30 v forward voltage v f ? ? 1.0 v i f = 10 ma capacitance c ? ? 0.31 pf v r = 1 v, f = 1 mhz ? ? 2.5 i f = 2 ma, f = 100 mhz forward resistance r f ? ? 1.5 ? i f = 10 ma, f = 100 mhz esd-capability * 1 ? 100 ? ? v c = 200 pf, rl = 0 ? , both forward and reverse direction 1 pulse. notes : 1. failure criterion ; i r > 100 na at v r = 30 v 2. please do not use the so ldering iron due to avoid high stress to the mp8 package.
RKP203KN rev.1.00 dec 16, 2005 page 3 of 4 main characteristic 1.0 10 0.1 0 0.2 0.4 0.6 0.8 1.0 10 -2 10 -4 10 -6 10 -8 10 -10 10 -12 040 10 30 20 50 10 -10 10 -8 10 -9 10 -11 10 -12 10 -13 10 -14 forward voltage v f (v) fig.1 forward current vs. forward voltage forward current i f (a) fig.3 capacitance vs. reverse voltage reverse voltage v r (v) capacitance c (pf) fig.2 reverse current vs. reverse voltage reverse voltage v r (v) reverse current i r (a) fig.4 forward resistance vs. forward current forward current i f (ma) forward resistance r f ( ? ) 0.1 1.0 10 f = 100mhz 1.0 0.1 1.0 f = 1mhz 0.1 10
RKP203KN rev.1.00 dec 16, 2005 page 4 of 4 package dimensions min nom max b 0.38 0.40 d 0.47 0.50 e 0.77 0.80 0.83 l 0.23 0.25 0.27 0.53 0.42 a 0.27 0.30 0.33 dimension in millimeters reference symbol ? 0.00029g mass[typ.] mp8v pxsn0002za-a renesas code jeita package code previous code package name mp8 d b e l l a under development pattern of terminal position areas e1 b 1 l 1 b1 0.45 e1 0.45 l 1 0.3 l 1
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology (shanghai) co., ltd. unit 205, azia center, no.133 yincheng rd (n), pudong district, shanghai 200120, china tel: <86> (21) 5877-1818, fax: <86> (21) 6887-7898 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> (2) 796-3115, fax: <82> (2) 796-2145 renesas technology malaysia sdn. bhd unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .5.0
|
